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Comprehensive Electronic Component Turn-Key Solutions
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| Our parent company, eComp, offers the following: |
Component Procurement Specialists
MICROCIRCUITS
DIGITAL-LINEAR-MEMORY
MICROS-PLD-PROM-EPROM
RF-ASIC-HYBRIDS
TRANSISTORS
BIPOLAR-FETS-UJT-SCR-TRIACS
DIODES / RECTIFIERS / ZENERS
CAPACITORS / RESISTORS
INDUCTORS / COILS
TRANSFORMERS / CONNECTORS
HARDWARE-PCB |
Detailed Services
• PLANNING & PARTS ENGINEERING
Procurement, Screening, Documentation & Scheduling
• TESTING & SCREENING SERVICES
• LEADS TINNING Solder Dip, Solderability Test
• PROGRAMMING
- PLD-PROM-EPROM-EEPROM-FLASH
Programming, Marking & Labeling
• PARTS MARKING
Marking resistence to solvents test
• SEMICONDUCTOR DIE PACKAGING
Design / Testing / Die Banking
• DOCUMENTATION
Specification-control drawings
Field engineering support
• MILITARY SPECIFICATIONS
MIL-PRF-38535, MIL-PRF-38534, MIL-PRF- 19500, MIL-STD-883, MIL-STD-750, MIL-STD-202, J-STD-001, J-STD-033, JEDEC & MANY OTHERS
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 PROGRAMMING: PLD-PROM-EPROM-EEPROM-FLASH
Programming, erasure, device blank verification marking, and labeling available for quick turnaround.
PROM - Programmable-Read-Only-Memory: A ROM which requires a programming operation. A memory device whose stored data content is established on an individual device basis through a programming process (usually involving the blowing of fuse links on the surface of the die). Unlike EPROMs and EEPROMs, PROMS cannot be erased and reprogrammed.
EPROM - Erasable Programmable Read Only Memory: A memory device whose content can be established through a programming process (usually hot electrode injection) and can be totally erased by exposure to ultraviolet light for sustained periods (typlically 30 minutes). When properly erased, the device can be reprogrammed.
EEPROM (E2PROM) - Electronically Erasable Programmable Read Only Memory: A memory device whose content can be established through a programming process (usually the tunneling of electrons across a thin layer of silicon dioxide to a floating gate). Each memory cell of an EEPROM can be individually erased by imposing a voltage to reverse the flow of electrons to move them away from the floating gate. The cell can then be reprogrammed. Both programming and erasing can be performed without removal of the device from the system in which it is used. |
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